Piezoelectric properties of LiM-doped (M = V, Nb, Ta, or Zr) AlN thin films

Characterization of LiM-doped (M = V, Nb, Ta, or Zr) piezoelectric aluminum nitride ((LiyM1−y)xAl1−xN) was performed by first-principles calculations and experimental approaches. The calculation results show that for all (LiyM1−y)xAl1−xN, coefficient d33,f is increased increasing the LiM doping concentration x up to 0.25. In comparison results, reveal only (LiyNb1−y)xAl1−xN has d33. absolute value d33 9.54 pC N−1 at 0.15 ((Li0.45Nb0.55)0.15Al0.85N) due elastic softening modulus E. addition, research investigates how inverts polarity depending on x. Insulating performance also evaluated, revealing induces resistivity degradation down 107 109 Ω·cm M V respectively. Results indicate (LiyM1−y)xAl1−xN systems represented Nb have potential as materials MEMS applications.